4 November 2016 Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers
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Abstract
The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.
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Isidoro Martinez, Juan Pedro Cascales, Jhen-Yong Hong, Minn-Tsong Lin, Mirko Prezioso, Alberto Riminucci, Valentin A. Dediu, Farkhad G. Aliev, "Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers", Proc. SPIE 9931, Spintronics IX, 99313P (4 November 2016); doi: 10.1117/12.2237721; https://doi.org/10.1117/12.2237721
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