26 September 2016 Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping
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Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.
Conference Presentation
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A. Montanaro, A. Montanaro, S. Mzali, S. Mzali, J.-P. Mazellier, J.-P. Mazellier, S. Molin, S. Molin, C. Larat, C. Larat, O. Bezencenet, O. Bezencenet, P. Legagneux, P. Legagneux, } "Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping", Proc. SPIE 9932, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX, 99320Q (26 September 2016); doi: 10.1117/12.2237289; https://doi.org/10.1117/12.2237289

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