Paper
26 September 2016 Quantum dot-based image sensors for cutting-edge commercial multispectral cameras
Emanuele Mandelli, Zach M. Beiley, Naveen Kolli, Andras G. Pattantyus-Abraham
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Abstract
This work presents the development of a quantum dot-based photosensitive film engineered to be integrated on standard CMOS process wafers. It enables the design of exceptionally high performance, reliable image sensors. Quantum dot solids absorb light much more rapidly than typical silicon-based photodiodes do, and with the ability to tune the effective material bandgap, quantum dot-based imagers enable higher quantum efficiency over extended spectral bands, both in the Visible and IR regions of the spectrum. Moreover, a quantum dot-based image sensor enables desirable functions such as ultra-small pixels with low crosstalk, high full well capacity, global shutter and wide dynamic range at a relatively low manufacturing cost. At InVisage, we have optimized the manufacturing process flow and are now able to produce high-end image sensors for both visible and NIR in quantity.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emanuele Mandelli, Zach M. Beiley, Naveen Kolli, and Andras G. Pattantyus-Abraham "Quantum dot-based image sensors for cutting-edge commercial multispectral cameras", Proc. SPIE 9933, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2016, 993304 (26 September 2016); https://doi.org/10.1117/12.2241441
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Near infrared

Camera shutters

Image sensors

Quantum dots

Quantum efficiency

Sensors

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