26 September 2016 Physical mechanisms of surface terahertz emission from semiconductors
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Abstract
Microscopic origin of THz emission from femtosecond laser excited narrow gap semiconductor surfaces is explained in terms of the photoelectron ballistic movement in non-parabolic and anisotropic conduction band. It has been shown that the azimuthal angle dependences of this emission are caused by the lateral photocurrent component resulting from that anisotropy. A strong THz radiation was observed from the lower symmetry crystal planes illuminated along their surface normal, which has allowed to demonstrate experimentally user-friendly line-of-sight THz emitters made from the bulk InAs and InSb, InAs pn diodes and p-i-n structures with GaInAs active layers.
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A. Krotkus, A. Krotkus, A. Arlauskas, A. Arlauskas, R. Adomavičius, R. Adomavičius, I. Nevinskas, I. Nevinskas, V. L. Malevich, V. L. Malevich, } "Physical mechanisms of surface terahertz emission from semiconductors", Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 993405 (26 September 2016); doi: 10.1117/12.2242113; https://doi.org/10.1117/12.2242113
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