26 September 2016 Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures
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Abstract
We analyze the terahertz properties of complex oxide hetero-structures with record-high carrier concentration approaching 1015 cm-2. Our results evidence a large room temperature terahertz conductivity, which corresponds to 3X to 6X larger mobility than what is extracted from electrical measurements. That is, in spite of a relatively lower mobility, when taking into account its ultra-large carrier concentration, the 2DEG in complex oxide hetero-structures can still attain a large terahertz conductivity, which is comparable with that in traditional high-mobility semiconductors or large-area CVVD graphene films. Moreover, we also discuss the perspectives off these hetero-structures for terahertz and high frequency electronic applications.
Conference Presentation
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Sara Arezoomandan, Sara Arezoomandan, Hugo O. Condori Quispe, Hugo O. Condori Quispe, Ashish Chanana, Ashish Chanana, Peng Xu, Peng Xu, Ajay Nahata, Ajay Nahata, Bharat Jalan, Bharat Jalan, Berardi Sensale-Rodriguez, Berardi Sensale-Rodriguez, } "Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures", Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 99340N (26 September 2016); doi: 10.1117/12.2238026; https://doi.org/10.1117/12.2238026
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