Hysteresis dependence on CH3NH3PbI3 deposition method in perovskite solar cells

Silvia Leticia Fernandes; Bruna Andressa Bregadiolli; Anna Christina Véron; Frank A. Nüesch; Maria Aparecida Zaghete; Carlos Frederico de Oliveira Graeff

doi:10.1117/12.2236855

23 September 2016 Hysteresis dependence on CH₃NH₃PbI₃ deposition method in perovskite solar cells

Silvia Leticia Fernandes, Bruna Andressa Bregadiolli, Anna Christina Véron, Frank A. Nüesch, Maria Aparecida Zaghete, Carlos Frederico de Oliveira Graeff

Author Affiliations +

Proceedings Volume 9936, Thin Films for Solar and Energy Technology VIII; 99360B (2016) https://doi.org/10.1117/12.2236855
Event: SPIE Optics + Photonics for Sustainable Energy, 2016, San Diego, California, United States

Abstract

CH₃NH₃PbI₃ perovskite solar cells are one of the most exciting technologies in the renewable energy field, resulting in over 20% power conversion efficiency. Deep understanding of the working principle is now required to turn the high efficiency solar cells into a reliable technology. In this work we have explored the role of deposition method on the crystallinity of perovskite films and its influence on the hysteresis behavior of the current-voltage characteristics. In addition Nb₂O₅ was used as hole blocking layer and its influence is also discussed. We have found that hysteresis is strongly dependent on both; perovskite deposition method and Nb₂O₅ thickness. The ideal condition where the hysteresis is suppressed or minimized was achieved by using the sequential deposition method for the perovskite semiconductor and a hole blocking layer of 50 nm.

Conference Presentation

Citation Download Citation

Silvia Leticia Fernandes, Bruna Andressa Bregadiolli, Anna Christina Véron, Frank A. Nüesch, Maria Aparecida Zaghete, and Carlos Frederico de Oliveira Graeff "Hysteresis dependence on CH₃NH₃PbI₃ deposition method in perovskite solar cells", Proc. SPIE 9936, Thin Films for Solar and Energy Technology VIII, 99360B (23 September 2016); https://doi.org/10.1117/12.2236855

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