Here, type-II InAs/AlAs0.16Sb0.84 quantum-wells are investigated as a candidate system for hot carrier absorbers. Continuous wave power and temperature dependent photoluminescence measurements are presented that indicate: a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation − below 90 K − to a regime where inhibited radiative recombination dominates the hot carrier relaxation − at higher temperatures1. The reduction in the PL efficiency is strongly coupled to an increase in the hot carrier temperature extracted from the measurements. This behavior is attributed to a build-up of electrons in the QWs, which appears to inhibit electron-phonon relaxation2.
ACCESS THE FULL ARTICLE
V. R. Whiteside, H. Esmaielpour, J. Tang, S. Vijeyaragunathan, T. D. Mishima, M. B. Santos, B. Wang, R. Q. Yang, I. R. Sellers, "Evidence of suppressed hot carrier relaxation in type-II InAs/AlAs1-xSbx quantum wells," Proc. SPIE 9937, Next Generation Technologies for Solar Energy Conversion VII, 993709 (23 September 2016);