Here, type-II InAs/AlAs0.16Sb0.84 quantum-wells are investigated as a candidate system for hot carrier absorbers. Continuous wave power and temperature dependent photoluminescence measurements are presented that indicate: a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation − below 90 K − to a regime where inhibited radiative recombination dominates the hot carrier relaxation − at higher temperatures1. The reduction in the PL efficiency is strongly coupled to an increase in the hot carrier temperature extracted from the measurements. This behavior is attributed to a build-up of electrons in the QWs, which appears to inhibit electron-phonon relaxation2.
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