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26 September 2016 Degradation of veteran Si modules in hot-humid locations in México
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In this work, the results of the research carried out on degradation mechanisms of c-SI PV modules after > 10 years of exposure in a Hot and humid climate in Mexico are presented. Degradation analysis using visual inspection, electrical performance, EL image, and IR was performed. 1-measurement analysis was implemented to determine the degradation rate per year. The Pmax degradation rate obtained was 1:41%/yr. The results presented indicate that most of the electrical degradation is due FF drop (increased series resistance) among other details. The aim of this work is to provide information regarding the long term reliability and degradation rate of c-Si modules in the hot and humid climate in Mexico.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Martinez-Escobar, P. A. Sánchez-Pérez, R. Santos-Magdaleno, J. Ortega-Cruz, and A. Sánchez-Juárez "Degradation of veteran Si modules in hot-humid locations in México", Proc. SPIE 9938, Reliability of Photovoltaic Cells, Modules, Components, and Systems IX, 99380P (26 September 2016);


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