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9 February 1989 Electrorefraction In Semiconductor Quantum Wells
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Abstract
We have measured electric-field-induced changes in refractive index in GaAs- and InP-based quantum well heterostructures. Excitonic effects provide index changes one to two orders of magnitude larger than in corresponding bulk semiconductors. This enhancement can be applied to low-voltage, compact devices for electro-optic phase modulation.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. E. Zucker "Electrorefraction In Semiconductor Quantum Wells", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960121
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