Quantifying charge trapping and molecular doping in organic p-i-n diodes

Chang-Min Keum; Shiyi Liu; Akram Al-Shadeedi; Vikash Kaphle; Björn Lüssem

doi:10.1117/12.2236985

23 September 2016 Quantifying charge trapping and molecular doping in organic p-i-n diodes

Chang-Min Keum, Shiyi Liu, Akram Al-Shadeedi, Vikash Kaphle, Björn Lüssem

Author Affiliations +

Proceedings Volume 9941, Organic Light Emitting Materials and Devices XX; 994122 (2016) https://doi.org/10.1117/12.2236985
Event: SPIE Organic Photonics + Electronics, 2016, San Diego, California, United States

Abstract

Organic p-i-n diodes enable the development of highly efficient organic devices such as organic light-emitting diodes. Understanding charge carrier trapping in these diodes is essential to comprehensively describe their electrical behaviors and increase their efficiency further. Here, a new bias stress protocol is developed to study charge trapping and the influence of trapping on molecular doping in organic p-i-n diodes. The results are discussed with the help of a novel analytical model, which is capable of quantifying the density of trapped charges and the doping efficiency from capacitance spectroscopy. We propose that this combined experimental/modeling approach is versatile and can lead to an advanced understanding of trapping in organic electronic devices.

Citation Download Citation

Chang-Min Keum, Shiyi Liu, Akram Al-Shadeedi, Vikash Kaphle, and Björn Lüssem "Quantifying charge trapping and molecular doping in organic p-i-n diodes", Proc. SPIE 9941, Organic Light Emitting Materials and Devices XX, 994122 (23 September 2016); https://doi.org/10.1117/12.2236985

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