23 September 2016 N-type molecular electrical doping in organic semiconductors: formation and dissociation efficiencies of charge transfer complex
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Abstract
Electrical doping is an important method in organic electronics to enhance device efficiency by controlling Fermi level, increasing conductivity, and reducing injection barrier from electrode. To understand the charge generation process of dopant in doped organic semiconductors, it is important to analyze the charge transfer complex (CTC) formation and dissociation into free charge carrier. In this paper, we correlate charge generation efficiency with the CTC formation and dissociation efficiency of n-dopant in organic semiconductors (OSs). The CTC formation efficiency of Rb2CO3 linearly decreases from 82.8% to 47.0% as the doping concentration increases from 2.5 mol% to 20 mol%. The CTC formation efficiency and its linear decrease with doping concentration are analytically correlated with the concentration-dependent size and number of dopant agglomerates by introducing the degree of reduced CTC formation. Lastly, the behavior of dissociation efficiency is discussed based on the picture of the statistical semiconductor theory and the frontier orbital hybridization model.
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Jae-Min Kim, Jae-Min Kim, Seung-Jun Yoo, Seung-Jun Yoo, Chang-Ki Moon, Chang-Ki Moon, Bomi Sim, Bomi Sim, Jae-Hyun Lee, Jae-Hyun Lee, Heeseon Lim, Heeseon Lim, Jeong Won Kim, Jeong Won Kim, Jang-Joo Kim, Jang-Joo Kim, } "N-type molecular electrical doping in organic semiconductors: formation and dissociation efficiencies of charge transfer complex", Proc. SPIE 9941, Organic Light Emitting Materials and Devices XX, 99411M (23 September 2016); doi: 10.1117/12.2235732; https://doi.org/10.1117/12.2235732
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