23 September 2016 Quantifying charge trapping and molecular doping in organic p-i-n diodes
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Abstract
Organic p-i-n diodes enable the development of highly efficient organic devices such as organic light-emitting diodes. Understanding charge carrier trapping in these diodes is essential to comprehensively describe their electrical behaviors and increase their efficiency further. Here, a new bias stress protocol is developed to study charge trapping and the influence of trapping on molecular doping in organic p-i-n diodes. The results are discussed with the help of a novel analytical model, which is capable of quantifying the density of trapped charges and the doping efficiency from capacitance spectroscopy. We propose that this combined experimental/modeling approach is versatile and can lead to an advanced understanding of trapping in organic electronic devices.
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Chang-Min Keum, Chang-Min Keum, Shiyi Liu, Shiyi Liu, Akram Al-Shadeedi, Akram Al-Shadeedi, Vikash Kaphle, Vikash Kaphle, Björn Lüssem, Björn Lüssem, } "Quantifying charge trapping and molecular doping in organic p-i-n diodes", Proc. SPIE 9941, Organic Light Emitting Materials and Devices XX, 994122 (23 September 2016); doi: 10.1117/12.2236985; https://doi.org/10.1117/12.2236985
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