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2 November 2016 High-hole-mobility organic-inorganic perovskite field-effect transistors (Conference Presentation)
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We have recently focused our attention on the application of perovskite materials to a semiconducting layer in field-effect transistors. Because perovskite materials are expected to promise the processability and flexibility inherent to organic semiconductors as well as the superior carrier transport inherent to inorganic semiconductors, we believe that organic semiconductor-like cost-effective, flexible transistors with inorganic semiconductor-like high carrier mobility can be realized using perovskite semiconductors in future. In this study, we have prepared the tin iodide-based perovskite as a semiconducting layer on silicon dioxide layers treated with a self-assembled monolayer containing ammonium iodide terminal groups by spin coating and, then, source-drain electrodes on the perovskite layer by vacuum deposition for the fabrication of a top-contact perovskite transistor. Because of a well-developed perovskite layer formed on the treated substrate and reduced contact resistance resulting from the top-contact structure, we have obtained a new record hole mobility of up to 12 cm2 V–1 s–1 in our perovskite transistors, which is about five times higher than a previous record hole mobility and is considered to be a very good value when compared with widely investigated organic transistors. Along with the high hole mobility, we have demonstrated that this surface treatment leads to smaller hysteresis in output and transfer characteristics and better stress stability under constant gate voltage application. These findings open the way for huge advances in solution-processable high-mobility transistors.
Conference Presentation
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Toshinori Matsushima, Sun Bin Hwang, Atula D. Sandanayaka, Chuanjiang Qin, Takashi Fujihara, Masayuki Yahiro, and Chihaya Adachi "High-hole-mobility organic-inorganic perovskite field-effect transistors (Conference Presentation)", Proc. SPIE 9943, Organic Field-Effect Transistors XV, 994305 (2 November 2016); doi: 10.1117/12.2236265;

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