23 September 2016 High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits
Author Affiliations +
The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Houin, G. Houin, F. Duez, F. Duez, L. Garcia, L. Garcia, E. Cantatore, E. Cantatore, F. Torricelli, F. Torricelli, L. Hirsch, L. Hirsch, D. Belot, D. Belot, C. Pellet, C. Pellet, M. Abbas, M. Abbas, } "High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits", Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430H (23 September 2016); doi: 10.1117/12.2238792; https://doi.org/10.1117/12.2238792

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