27 September 2016 Array imaging system for lithography
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Abstract
We present an integrated array imaging system based on a stack of microlens arrays. The microlens arrays are manufactured by melting resist and reactive ion etching (RIE) technology on 8’’ wafers (fused silica) and mounted by wafer-level packaging (WLP)1. The array imaging system is configured for 1X projection (magnification m = +1) of a mask pattern onto a planar wafer. The optical system is based on two symmetric telescopes, thus anti-symmetric wavefront aberrations like coma, distortion, lateral color are minimal. Spherical aberrations are reduced by using microlenses with aspherical lens profiles. In our system design approach, sub-images of individual imaging channels do not overlap to avoid interference. Image superposition is achieved by moving the array imaging system during the exposure time. A tandem Koehler integrator illumination system (MO Exposure Optics) is used for illumination. The angular spectrum of the illumination light underfills the pupils of the imaging channels to avoid crosstalk. We present and discuss results from simulation, mounting and testing of a first prototype of the investigated array imaging system for lithography.
Conference Presentation
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Raoul Kirner, Raoul Kirner, Kevin Mueller, Kevin Mueller, Pauline Malaurie, Pauline Malaurie, Uwe Vogler, Uwe Vogler, Wilfried Noell, Wilfried Noell, Toralf Scharf, Toralf Scharf, Reinhard Voelkel, Reinhard Voelkel, } "Array imaging system for lithography", Proc. SPIE 9951, Optical System Alignment, Tolerancing, and Verification X, 99510A (27 September 2016); doi: 10.1117/12.2237339; https://doi.org/10.1117/12.2237339
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