7 September 2016 Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD
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Abstract
This contribution presents results on the structural and optoelectronic properties of InN layers grown on AlN/sapphire (0001) templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPAMOCVD). The AlN nucleation layer (NL) was varied to assess the physical properties of the InN layers. For ex-situ analysis of the deposited structures, Raman spectroscopy, Atomic Force Microscopy (AFM), and Fourier Transform Infrared (FTIR) reflectance spectroscopy have been utilized. The structural and optoelectronic properties are assessed by Raman-E2 high FWHM values, surface roughness, free carrier concentrations, mobility of the free carriers, and high frequency dielectric function. This study focus on optimizing the AlN nucleation layer (e.g. temporal precursor exposure, nitrogen plasma exposure, plasma power and AlN buffer growth temperature) and its effect on the InN layer properties.
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Indika Seneviranthna M. K., Indika Seneviranthna M. K., Daniel Seidlitz, Daniel Seidlitz, Alireza Fali, Alireza Fali, Brendan Cross, Brendan Cross, Yohannes Abate, Yohannes Abate, Nikolaus Dietz, Nikolaus Dietz, } "Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD", Proc. SPIE 9954, Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 99540R (7 September 2016); doi: 10.1117/12.2237957; https://doi.org/10.1117/12.2237957
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