This contribution presents results on the structural and optoelectronic properties of InN layers grown on AlN/sapphire
(0001) templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPAMOCVD).
The AlN nucleation layer (NL) was varied to assess the physical properties of the InN layers. For ex-situ
analysis of the deposited structures, Raman spectroscopy, Atomic Force Microscopy (AFM), and Fourier Transform
Infrared (FTIR) reflectance spectroscopy have been utilized. The structural and optoelectronic properties are assessed by
Raman-E2 high FWHM values, surface roughness, free carrier concentrations, mobility of the free carriers, and high
frequency dielectric function. This study focus on optimizing the AlN nucleation layer (e.g. temporal precursor
exposure, nitrogen plasma exposure, plasma power and AlN buffer growth temperature) and its effect on the InN layer