PROCEEDINGS VOLUME 9957
SPIE OPTICAL ENGINEERING + APPLICATIONS | AUG 28 - SEP 1 2016
Wide Bandgap Power Devices and Applications
Proceedings Volume 9957 is from: Logo
SPIE OPTICAL ENGINEERING + APPLICATIONS
Aug 28 - Sep 1 2016
San Diego, California, United States
Front Matter: Volume 9957
Proc. SPIE 9957, Front Matter: Volume 9957, 995701(23 December 2016);doi: 10.1117/12.2256398
Wide Band Gap Materials and Devices I
Proc. SPIE 9957, Evaluation of surface recombination of SiC for development of bipolar devices, 995703(19 September 2016);doi: 10.1117/12.2240471
Proc. SPIE 9957, Influence of hydrogen plasma irradiation on defects of ZnO, 995704(19 September 2016);doi: 10.1117/12.2237408
Wide Band Gap Material and Devices II
Proc. SPIE 9957, Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient, 995709(19 September 2016);doi: 10.1117/12.2239177
WBG Power Applications I
Proc. SPIE 9957, A survey on GaN- based devices for terahertz photonics, 99570A(19 September 2016);doi: 10.1117/12.2240591
Proc. SPIE 9957, Switching performance and efficiency investigation of GaN based DC-DC Buck converter for low voltage and high current applications, 99570C(19 September 2016);doi: 10.1117/12.2238142
Poster Session
Proc. SPIE 9957, Simulation of push-pull inverter using wide bandgap devices, 99570H(19 September 2016);doi: 10.1117/12.2238362
Proc. SPIE 9957, Silicon carbide DC-DC multilevel Cuk converter, 99570I(19 September 2016);doi: 10.1117/12.2238931
Proc. SPIE 9957, Modeling a multilevel boost converter using SiC components for PV application, 99570J(19 September 2016);doi: 10.1117/12.2238932
Proc. SPIE 9957, Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices, 99570K(19 September 2016);doi: 10.1117/12.2238195
Proc. SPIE 9957, Thermal modeling of wide bandgap materials for power MOSFETs, 99570L(19 September 2016);doi: 10.1117/12.2240675
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