19 September 2016 Ga2O3 as both gate dielectric and surface passivation via sol-gel method at room ambient
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Proceedings Volume 9957, Wide Bandgap Power Devices and Applications; 995709 (2016); doi: 10.1117/12.2239177
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States
Abstract
We report the use of sol-gel method at room ambient to grow nanoscale thin film of Ga2O3 on Si surface for both surface passivation and gate dielectric. The admittance measurements were carried out in the frequency range of 20 kHz-1 MHz at room temperature. Voltage dependent profile of interfacial trap density (Dit) was obtained by using low and high frequency capacitance method. The capacitance (C)-voltage (V) analyses show that the structures have a low interfacial trap density (Dit) of 1x1012 cm-2eV-1. The Ga2O3 thin film synthesized via sol-gel method directly on devices to function as a gate dielectric film is found to be very effective. We also present our experimental results for a number of gate dielectric and device passivation applications.
Conference Presentation
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Ahmet Kaya, Jianyi Gao, Hilal Cansızoglu, Ahmed S. Mayet, Hasina H. Mamtaz, Soroush GhandiParsi, Srabanti Chowdhury, M. Saif Islam, "Ga2O3 as both gate dielectric and surface passivation via sol-gel method at room ambient", Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995709 (19 September 2016); doi: 10.1117/12.2239177; http://dx.doi.org/10.1117/12.2239177
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KEYWORDS
Dielectrics

Interfaces

Capacitance

Thin films

Sol-gels

Resistance

Silicon

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