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19 September 2016 Simulation of push-pull inverter using wide bandgap devices
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This paper discusses the use of wide bandgap devices (SiC-MOSFET) in the design of a push-pull inverter which provides inexpensive low power dc-ac inverters. The parameters used were 1200V SiC MOSFET(C2M0040120D) made by power company ROHM. This modeling was created using parameters that were provided from a device datasheet. The spice model is provided by this company to study the effect of adding this component on push-pull inverter ordinary circuit and compared results between SiC MOSFET and silicon MOSFET (IRFP260M). The results focused on Vout and Vmos stability as well as on output power and MOSFET power loss because it is a very crucial aspect on DC-AC inverter design. These results are done using the National Instrument simulation program (Multisim 14). It was found that power loss is better in the 12 and 15 vdc inverter. The Vout in the SIC MOSFET circuit shows more stability in the high current low resistance load in comparison to the Silicon MOSFET circuit and this will improve the overall performance of the circuit.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mustafa Al-badri and Mohammed A. Matin "Simulation of push-pull inverter using wide bandgap devices", Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 99570H (19 September 2016);

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