The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be
available in the market because of their enormous advantages over the traditional Si power devices. An example of
WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of
blocking higher voltages, reducing switching and conduction losses and supports high switching frequency.
Consequently, SiC power devices have become the affordable choice for high frequency and power application. The
goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous
conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different
switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed.
Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different
switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of
Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to
the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low
losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV
applications where a converter of smaller size with high efficiency, and cost effective is required.