30 September 2016 CsI:Tl scintillator separated by Si grid partition wall
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Abstract
The spatial resolution of scintillator type imaging detector is not so high because diffusion of luminescence in the scintillator. As a countermeasure, the silicon substrate was processed to make a small grid by MEMS technique for optical separation of scintillator. The silicon grid wall can completely obtain optical-separation for visible light as a result of X-ray scintillation. Moreover, we can get large-size silicon wafers up to diameter of 30cm with high precision semiconductor process. In this paper, the purpose is to fill a scintillator material such as CsI:Tl, inside of the grid substrate. Because the aspect ratio of the grid is large (90μm x 90μm with 800μm depth), it is not easy to fill scintillator inside the grid. Moreover, it is necessary to ensure uniformity, intention of light emission. In this study, the CsI:Tl was filled inside of the grid by resistive heated evaporation method. We evaluated by X-ray luminescence and test chart.
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Kento Tabata, Junichi Nishizawa, Akihumi Koike, Toru Aoki, "CsI:Tl scintillator separated by Si grid partition wall", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99681H (30 September 2016); doi: 10.1117/12.2238424; https://doi.org/10.1117/12.2238424
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