19 September 2016 Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor
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Abstract
Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.
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K. Roodenko, K. Roodenko, K. K. Choi, K. K. Choi, K. P. Clark, K. P. Clark, E. D. Fraser, E. D. Fraser, K. W. Vargason, K. W. Vargason, J.-M. Kuo, J.-M. Kuo, Y.-C. Kao, Y.-C. Kao, P. R. Pinsukanjana, P. R. Pinsukanjana, } "Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor", Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 997404 (19 September 2016); doi: 10.1117/12.2236881; https://doi.org/10.1117/12.2236881
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