19 September 2016 Extended short wavelength infrared HgCdTe detectors on silicon substrates
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Abstract
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. H. Park, J. H. Park, D. Hansel, D. Hansel, A. Mukhortova, A. Mukhortova, Y. Chang, Y. Chang, R. Kodama, R. Kodama, J. Zhao, J. Zhao, S. Velicu, S. Velicu, F. Aqariden, F. Aqariden, "Extended short wavelength infrared HgCdTe detectors on silicon substrates", Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 99740H (19 September 2016); doi: 10.1117/12.2238053; https://doi.org/10.1117/12.2238053
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