22 July 2016 Ultrashort pulse laser slicing of semiconductor crystal
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Proceedings Volume 9983, Pacific Rim Laser Damage 2016: Optical Materials for High-Power Lasers; 99831B (2016) https://doi.org/10.1117/12.2235146
Event: Pacific Rim Laser Damage 2016: Optical Materials for High Power Lasers, 2016, Yokohama, Japan
Abstract
Meanwhile, by the convention wire-saw technique, it is difficult to slice off a thin wafer from bulk SiC crystal without the reserving space for cutting. In this study, we have achieved exfoliation of 4H-SiC single crystal by femtosecond laser induced slicing method. By using this, the exfoliated surface with the root-mean-square roughness of 3 μm and the cutting-loss thickness smaller than 30 μm was successfully demonstrated. We have also observed the nanostructure on the exfoliated surface in SiC crystal.
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Eunho Kim, Eunho Kim, Yasuhiko Shimotsuma, Yasuhiko Shimotsuma, Masaaki Sakakura, Masaaki Sakakura, Kiyotaka Miura, Kiyotaka Miura, } "Ultrashort pulse laser slicing of semiconductor crystal", Proc. SPIE 9983, Pacific Rim Laser Damage 2016: Optical Materials for High-Power Lasers, 99831B (22 July 2016); doi: 10.1117/12.2235146; https://doi.org/10.1117/12.2235146
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