Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Editor(s): Nobuyuki Yoshioka
6-8 April 2016
Yokohama, Japan
Front Matter: Volume 9984
Proc. SPIE 9984, Front Matter: Volume 9984, 998401 (7 September 2016);
Photomask Fabrication Processes
Proc. SPIE 9984, Influence of different developer nozzle types on the photomask performance, 998403 (10 May 2016);
Proc. SPIE 9984, Lithographic performance of a new “low-k” mask, 998404 (10 May 2016);
Writing Technologies
Proc. SPIE 9984, Multi-beam mask writer MBM-1000 and its application field, 998405 (10 May 2016);
Proc. SPIE 9984, Model based correction of placement error in EBL and its verification, 998406 (10 May 2016);
Proc. SPIE 9984, The study on quantifiable analysis for complex OPCed patterns based on Mask CD SEM contour information , 998407 (10 May 2016);
Proc. SPIE 9984, Investigation and modeling of CPL mask profiles using OCD, 998408 (10 May 2016);
Proc. SPIE 9984, Comparison of analysis techniques for aerial image metrology on advanced photomask, 998409 (10 May 2016);
EDA, MDP & Lithography
Proc. SPIE 9984, Computational nano OPC DFM for LV Fin-type SRAM, 99840A (10 May 2016);
Proc. SPIE 9984, eBeam community speaks out on future directions for photomask manufacturing , 99840B (10 May 2016);
Proc. SPIE 9984, ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer, 99840C (10 May 2016);
EUVL Masks
Proc. SPIE 9984, Etched multilayer EUV mask fabrication for sub-60nm pattern based on effective mirror width , 99840E (10 May 2016);
Proc. SPIE 9984, The impact of the residual stress on the EUV pellicle, 99840F (10 May 2016);
Proc. SPIE 9984, Thin absorber EUV photomask based on mixed Ni and TaN material, 99840G (10 May 2016);
Mask/Lithography Related Technologies in Academia
EUVL Masks I
Proc. SPIE 9984, Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system, 99840M (10 May 2016);
Proc. SPIE 9984, Clean induced feature CD shift of EUV mask, 99840N (10 May 2016);
Proc. SPIE 9984, Novel EUV mask black border suppressing EUV and DUV OoB light reflection, 99840O (10 May 2016);
Proc. SPIE 9984, Ultrahigh efficiency EUV contact-hole printing with chromeless phase shift mask, 99840P (10 May 2016);
Proc. SPIE 9984, Defect avoidance for EUV photomask readiness at the 7 nm node, 99840Q (10 May 2016);
Proc. SPIE 9984, EBL2, a flexible, controlled EUV exposure and surface analysis facility, 99840R (10 May 2016);
Proc. SPIE 9984, Error analysis of overlay compensation methodologies and proposed functional tolerances for EUV photomask flatness, 99840S (10 May 2016);
NIL Special Session
Proc. SPIE 9984, High resolution hole patterning with EB lithography for NIL template production , 99840T (10 May 2016);
Proc. SPIE 9984, In-line surface preparation and resist plug removal on NIL templates, 99840U (10 May 2016);
Proc. SPIE 9984, The measurement capabilities of cross-sectional profile of Nanoimprint template pattern using small angle x-ray scattering, 99840V (18 May 2016);
Photomask Fabrication Processes Addendum
Proc. SPIE 9984, Formation mechanism of the photomask blanks material related haze, 99840W (20 May 2016);
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