10 May 2016 Development of a new high transmission phase shift mask technology for 10 nm logic node
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Abstract
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole patterning by reducing the MEEF and improving the depth of focus (DOF). First, the simulated MEEF and DOF data will be compared between the 6% and high T PSM masks with the transmission of high T mask blank varying from 12% to 20%. This resulted in selection of a 12% transmission phase shift mask. As part of this work a new 12% attenuated phase shift mask blank was developed. A detailed description and results of the key performance metrics of the new mask blank including radiation durability, dry etch properties, film thickness, defect repair, and defect inspection will be shared. In addition, typical mask critical dimension uniformity and mask minimum feature size performance for 10 nm logic node via level mask patterns will be shown. Furthermore, the results of work to optimize the chrome hard mask film properties to meet the final mask minimum feature size requirements will be shared. Lastly, the key results of detailed lithographic performance comparisons of the process of record 6% and new 12% phase shift masks on wafer will be described. The 12% High T blank shows significantly better MEEF and larger DOF than those of 6% PSM mask blank, which is consistent with our simulation data.
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Thomas Faure, Yoshifumi Sakamoto, Yusuke Toda, Karen Badger, Kazunori Seki, Mark Lawliss, Takeshi Isogawa, Amy Zweber, Masayuki Kagawa, Richard Wistrom, Yongan Xu, Granger Lobb, Ramya Viswanathan, Lin Hu, Yukio Inazuki, Kazuhiro Nishikawa, "Development of a new high transmission phase shift mask technology for 10 nm logic node", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998402 (10 May 2016); doi: 10.1117/12.2241480; https://doi.org/10.1117/12.2241480
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