10 May 2016 Lithographic performance of a new “low-k” mask
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Abstract
We have been researching new mask blank materials for the next generation lithography (NGL) and developed a new mask blank with low-k phase shifter [1] [2]. The low-k phase shifter consists of only Si and N. In our previous work, we reported the advantages of developed SiN phase shift mask (PSM) [2]. It showed high lithographic performance and high durability against ArF excimer laser as well as against cleaning. In this report, we further verified its high lithographic performance on several types of device pattern. The SiN PSM had high lithographic performance compared with conventional 6% MoSi PSM. Exposure latitude (EL) and mask enhancement factor (MEEF) were especially improved on originally designed Gate, Metal and Via patterns.
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Takashi Adachi, Takashi Adachi, Ayako Tani, Ayako Tani, Yukihiro Fujimura, Yukihiro Fujimura, Katsuya Hayano, Katsuya Hayano, Yasutaka Morikawa, Yasutaka Morikawa, Hiroyuki Miyashita, Hiroyuki Miyashita, Yukio Inazuki, Yukio Inazuki, Yoshio Kawai, Yoshio Kawai, } "Lithographic performance of a new “low-k” mask", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998404 (10 May 2016); doi: 10.1117/12.2242870; https://doi.org/10.1117/12.2242870
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