Model based correction of placement error in EBL and its verification

Sergey Babin; Sergey Borisov; Vladimir Militsin; Tadashi Komagata; Tetsuro Wakatsuki

doi:10.1117/12.2244793

10 May 2016 Model based correction of placement error in EBL and its verification

Sergey Babin, Sergey Borisov, Vladimir Militsin, Tadashi Komagata, Tetsuro Wakatsuki

Proceedings Volume 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 998406 (2016) https://doi.org/10.1117/12.2244793
Event: Photomask Japan 2016, 2016, Yokohama, Japan

Abstract

In maskmaking, the main source of error contributing to placement error is charging. DISPLACE software corrects the placement error for any layout, based on a physical model. The charge of a photomask and multiple discharge mechanisms are simulated to find the charge distribution over the mask. The beam deflection is calculated for each location on the mask, creating data for the placement correction. The software considers the mask layout, EBL system setup, resist, and writing order, as well as other factors such as fogging and proximity effects correction. The output of the software is the data for placement correction. One important step is the calibration of physical model. A test layout on a single calibration mask was used for calibration. The extracted model parameters were used to verify the correction. As an ultimate test for the correction, a sophisticated layout was used for the verification that was very different from the calibration mask. The placement correction results were predicted by DISPLACE. A good correlation of the measured and predicted values of the correction confirmed the high accuracy of the charging placement error correction.

Citation Download Citation

Sergey Babin, Sergey Borisov, Vladimir Militsin, Tadashi Komagata, and Tetsuro Wakatsuki "Model based correction of placement error in EBL and its verification", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998406 (10 May 2016); https://doi.org/10.1117/12.2244793

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available