10 May 2016 Investigation and modeling of CPL mask profiles using OCD
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Abstract
Mask profile of chromeless phase-shifting lithography (CPL) defined by OCD has been investigated. In CPL masks, unbalanced bombardments caused by different ion accelerations lead to the formation of micro-notch structures. A better understanding of micro-notch structures is essential for quality gating of mask processes to improve of CPL mask profiles. By measuring 12 of 16 elements of Mueller matrix, we are able to set up a model to simulate the depth of micro-notch structure profile which shows good correlation with TEM images. Moreover, values of CD, quartz etching depth and side wall angle acquired by OCD are presented and compared with those obtained by SEM, TEM and AFM, respectively.
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Hsuan-Chen Chen, Hsuan-Chen Chen, Ren-Hao Lin, Ren-Hao Lin, Chien-Cheng Chen, Chien-Cheng Chen, Cheng-Hsuan Huang, Cheng-Hsuan Huang, Ta-Cheng Lien, Ta-Cheng Lien, Chia-Jen Chen, Chia-Jen Chen, Gaston Lee, Gaston Lee, Hsin-Chang Lee, Hsin-Chang Lee, Anthony Yen, Anthony Yen, } "Investigation and modeling of CPL mask profiles using OCD", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998408 (10 May 2016); doi: 10.1117/12.2245332; https://doi.org/10.1117/12.2245332
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