10 May 2016 EBL2, a flexible, controlled EUV exposure and surface analysis facility
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Abstract
TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source. EUV intensity, pupil, spectrum, and repetition rate are all adjustable. In-situ measurements by ellipsometry will enable real time monitoring of the sample condition. The XPS will be capable of analyzing the full surface area of EUV masks and pellicles, as well as performing angle resolved analysis on smaller samples. Sample transfer between the XPS and the Beam Line will be possible without breaking vacuum.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edwin te Sligte, Edwin te Sligte, Norbert Koster, Norbert Koster, Freek Molkenboer, Freek Molkenboer, Alex Deutz, Alex Deutz, } "EBL2, a flexible, controlled EUV exposure and surface analysis facility", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 99840R (10 May 2016); doi: 10.1117/12.2240302; https://doi.org/10.1117/12.2240302
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