Proceedings Volume 9985 is from: Logo
SPIE PHOTOMASK TECHNOLOGY
12-14 September 2016
San Jose, California, United States
Front Matter: Volume 9985
Proc. SPIE 9985, Front Matter: Volume 9985, 998501(29 November 2016);doi: 10.1117/12.2256530
Advanced Writers
Proc. SPIE 9985, MBMW-101: World's 1st high-throughput multi-beam mask writer, 998505(25 October 2016);doi: 10.1117/12.2243638
Proc. SPIE 9985, The technical consideration of multi-beam mask writer for production, 998506(3 October 2016);doi: 10.1117/12.2243129
Proc. SPIE 9985, Improvement of Electron Beam Lithography modeling for overdose exposures by using Dill transformation, 998507(26 September 2016);doi: 10.1117/12.2240928
Proc. SPIE 9985, Electron beam mask writer EBM-9500 for logic 7nm node generation, 998508(25 October 2016);doi: 10.1117/12.2242987
Advanced Materials
Proc. SPIE 9985, Development of a novel closed EUV pellicle for EUVL manufacturing, 99850B(26 September 2016);doi: 10.1117/12.2241393
Proc. SPIE 9985, Introducing the EUV CNT pellicle, 99850C(25 October 2016);doi: 10.1117/12.2243019
Proc. SPIE 9985, Development of advanced multi-tone mask by using two different transmittance modulation materials, 99850D(26 September 2016);doi: 10.1117/12.2241336
Student Session
Proc. SPIE 9985, Influence of non-uniform intensity distribution of deformed pellicle for N7 patterning, 99850G(26 September 2016);doi: 10.1117/12.2242999
Proc. SPIE 9985, Impact of noise sources and optical design on defect sensitivity for EUV actinic pattern inspection, 99850I(3 October 2016);doi: 10.1117/12.2242794
Proc. SPIE 9985, Observation results of actual phase defects using micro coherent EUV scatterometry microscope, 99850K(25 October 2016);doi: 10.1117/12.2246945
Inspection and Metrology
Proc. SPIE 9985, Reticle inspection equipment productivity increase using SEMI specification for reticle and pod management, 99850L(25 October 2016);doi: 10.1117/12.2241129
Proc. SPIE 9985, YieldStar based reticle 3D measurements and its application, 99850M(26 September 2016);doi: 10.1117/12.2242857
Proc. SPIE 9985, Evaluation of photomask flatness compensation for extreme ultraviolet lithography, 99850N(17 November 2016);doi: 10.1117/12.2240956
Proc. SPIE 9985, Take a byte out of MEEF: VAMPIRE: Vehicle for Advanced Mask Pattern Inspection Readiness Evaluations, 99850O(26 September 2016);doi: 10.1117/12.2243642
Mask Manufacturability
Proc. SPIE 9985, Mask manufacturing of advanced technology designs using multi-beam lithography (part 2), 99850R(26 September 2016);doi: 10.1117/12.2243407
Proc. SPIE 9985, Analyzing EUV mask costs, 99850T(25 October 2016);doi: 10.1117/12.2246796
End User Analysis
Proc. SPIE 9985, Comparing curvilinear vs Manhattan ILT shape efficacy on EPE and process window, 99850V(3 October 2016);doi: 10.1117/12.2243030
Proc. SPIE 9985, Experimental verification of AI decomposition-based source optimization for M1 two-bar building blocks in 0.33NA EUVL, 99850W(19 October 2016);doi: 10.1117/12.2240862
Proc. SPIE 9985, Quantifying imaging performance bounds of extreme dipole illumination in high NA optical lithography, 99850X(3 October 2016);doi: 10.1117/12.2240904
Proc. SPIE 9985, UDOF direct improvement by modulating mask absorber thickness, 99850Y(3 October 2016);doi: 10.1117/12.2234760
Process
Proc. SPIE 9985, Comparative study on PS material of EAPSM for flat panel display, 998512(4 October 2016);doi: 10.1117/12.2241325
Proc. SPIE 9985, Correction of placement error in EBL using model based method, 998513(4 October 2016);doi: 10.1117/12.2256908
Cleaning and Repair
Proc. SPIE 9985, Megasonic cleaning strategy for sub-10nm photomasks, 998515(4 October 2016);doi: 10.1117/12.2241143
Proc. SPIE 9985, Identification of a new source of reticle contamination, 998516(4 October 2016);doi: 10.1117/12.2247576
Proc. SPIE 9985, Phase-independent multilayer defect repair for EUV photomasks, 998517(4 October 2016);doi: 10.1117/12.2245442
Advanced EDA
Proc. SPIE 9985, Software-based data path for raster-scanned multi-beam mask lithography, 998519(25 October 2016);doi: 10.1117/12.2243035
Proc. SPIE 9985, OPC care-area feedforwarding to MPC, 99851A(4 October 2016);doi: 10.1117/12.2242972
Proc. SPIE 9985, The performance improvement of SRAF placement rules using GA optimization, 99851C(25 October 2016);doi: 10.1117/12.2241015
Alternative Lithography
Proc. SPIE 9985, Writing next-generation display photomasks, 99851D(25 October 2016);doi: 10.1117/12.2241850
Proc. SPIE 9985, Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing, 99851G(4 October 2016);doi: 10.1117/12.2243114
Poster Session: Advanced Materials and Advanced Writers
Proc. SPIE 9985, Prototyping 9-inch size PSM mask blanks for 450mm wafer process (2016), 99851H(4 October 2016);doi: 10.1117/12.2241378
Proc. SPIE 9985, Evaluation of the properties of the permeability film material using cellulose nanofibers, 99851I(4 October 2016);doi: 10.1117/12.2243418
Proc. SPIE 9985, 7-nm e-beam resist sensitivity characterization, 99851J(4 October 2016);doi: 10.1117/12.2243683
Poster Session: Students
Proc. SPIE 9985, Mechanical stress induced by external forces in the extreme ultraviolet pellicle, 99851K(4 October 2016);doi: 10.1117/12.2242174
Proc. SPIE 9985, Investigation of fabrication process for sub 20-nm dense pattern of non-chemically amplified electron beam resist based on acrylic polymers, 99851L(4 October 2016);doi: 10.1117/12.2242986
Posters Session: Inspection and Metrology
Proc. SPIE 9985, The CD control improvement by using CDSEM 2D measurement of complex OPC patterns, 99851M(4 October 2016);doi: 10.1117/12.2241326
Proc. SPIE 9985, The study of CD side to side error in line/space pattern caused by post-exposure bake effect, 99851N(5 October 2016);doi: 10.1117/12.2241277
Proc. SPIE 9985, Scanning coherent scattering methods for actinic EUV mask inspection, 99851P(5 October 2016);doi: 10.1117/12.2242961
Proc. SPIE 9985, To repair or not to repair: with FAVOR® there is no question, 99851Q(5 October 2016);doi: 10.1117/12.2243620
Proc. SPIE 9985, Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy, 99851S(17 November 2016);doi: 10.1117/12.2242406
Proc. SPIE 9985, Development of actual EUV mask observation method for micro coherent EUV scatterometry microscope, 99851T(25 October 2016);doi: 10.1117/12.2242809
Proc. SPIE 9985, Registration performance on EUV masks using high-resolution registration metrology, 99851W(5 October 2016);doi: 10.1117/12.2241498
Posters: Mask Manufacturability and End User
Proc. SPIE 9985, Correction of deflection under mask’s own weight by bending mask technology, 99851X(5 October 2016);doi: 10.1117/12.2241153
Proc. SPIE 9985, Defect inspection and printability study for 14 nm node and beyond photomask, 99851Y(5 October 2016);doi: 10.1117/12.2243514
Proc. SPIE 9985, Reticle decision center: a novel applications platform for enhancing reticle yield and productivity at 10nm technology and beyond, 99851Z(5 October 2016);doi: 10.1117/12.2241482
Proc. SPIE 9985, Wafer hot spot identification through advanced photomask characterization techniques, 998521(5 October 2016);doi: 10.1117/12.2248678
Poster Session: Cleaning and Repair
Proc. SPIE 9985, Defect management on photomasks with dry treatment assistance, 998522(5 October 2016);doi: 10.1117/12.2240469
Proc. SPIE 9985, Carbon dioxide gas purification and analytical measurement for leading edge mask and wafer cleaning, 998523(5 October 2016);doi: 10.1117/12.2241479
Proc. SPIE 9985, Acoustic characterization of two megasonic devices for photomask cleaning, 998524(5 October 2016);doi: 10.1117/12.2243124
Poster Session: Advanced EDA
Proc. SPIE 9985, Auto-score system to optimize OPC recipe parameters using genetic algorithm, 998525(5 October 2016);doi: 10.1117/12.2241178
Proc. SPIE 9985, OPC model sampling evaluation and weakpoint “in-situ” improvement, 998527(5 October 2016);doi: 10.1117/12.2240934
Proc. SPIE 9985, Suppressing rippling with minimized corner rounding through OPC fragmentation optimization, 998528(5 October 2016);doi: 10.1117/12.2241409
Proc. SPIE 9985, Combining mask and OPC process verification for improved wafer patterning and yield, 99852A(25 October 2016);doi: 10.1117/12.2246563