26 September 2016 Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)
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Abstract
As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.
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Michael Green, Michael Green, Young Ham, Young Ham, Brian Dillon, Brian Dillon, Bryan Kasprowicz, Bryan Kasprowicz, Ik Boum Hur, Ik Boum Hur, Joong Hee Park, Joong Hee Park, Yohan Choi, Yohan Choi, Jeff McMurran, Jeff McMurran, Henry Kamberian, Henry Kamberian, Daniel Chalom, Daniel Chalom, Jan Klikovits, Jan Klikovits, Michal Jurkovic, Michal Jurkovic, Peter Hudek, Peter Hudek, } "Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)", Proc. SPIE 9985, Photomask Technology 2016, 99850R (26 September 2016); doi: 10.1117/12.2243407; https://doi.org/10.1117/12.2243407
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