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26 September 2016 Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)
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As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Green, Young Ham, Brian Dillon, Bryan Kasprowicz, Ik Boum Hur, Joong Hee Park, Yohan Choi, Jeff McMurran, Henry Kamberian, Daniel Chalom, Jan Klikovits, Michal Jurkovic, and Peter Hudek "Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)", Proc. SPIE 9985, Photomask Technology 2016, 99850R (26 September 2016);

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