The introduction of Extreme Ultraviolet Lithography (EUV) as a replacement for multiple patterning is based on
improvements of cycle time, yield, and cost. Earlier cost studies have assumed a simple assumption that EUV masks
(being more complex with the multilayer coated blank) are not more than three times as expensive as advanced ArFi
(ArF immersion) masks. EUV masks are expected to be more expensive during the ramp of the technology because of
the added cost of the complex mask blank, the use of EUV specific mask tools, and a ramp of yield learning relative to
the more mature technologies. This study concludes that, within a range of scenarios, the hypothesis that EUV mask
costs are not more than three times that of advanced ArFi masks is valid and conservative.