Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and
Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist
deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows
into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV
radiation, and then the mask is removed, leaving a patterned resist on the substrate.
There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity
and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of
semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the
mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by
introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this
work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers.
On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for
nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle
control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution
and in meeting the image placement specification for replica masks.