4 October 2016 7-nm e-beam resist sensitivity characterization
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Over time mask makers have been driven to low sensitivity e-beam resist materials to meet lithographic patterning needs. For 7-nm logic node, resolution enhancement techniques continue to evolve bringing more complexity on mask and additional mask builds per layer. As demonstrated in literature, low sensitivity materials are needed for low line edge roughness (LER) but impact write tool through put. In characterizing resist sensitivity for 7-nm, we explore more broadly what advantages and disadvantages moving to lower sensitivity resist materials brings, where LER, critical dimension uniformity, resolution, fogging, image placement, and write time results and trends are presented. In this paper, resist material performance are reported for sensitivities ranging from 20 to 130 μC/cm2 at 50% proximity effect correction, where the exposure will be using a single beam platform. Materials examined include negative tone resist types with chemical amplification and positive tone without chemical amplification focusing on overall trends for 7-nm e-beam resist performance.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amy Zweber, Yusuke Toda, Yoshifumi Sakamoto, Thomas Faure, Jed Rankin, Steven Nash, Masayuki Kagawa, Michael Fahrenkopf, Takeshi Isogawa, Richard Wistrom, "7-nm e-beam resist sensitivity characterization", Proc. SPIE 9985, Photomask Technology 2016, 99851J (4 October 2016); doi: 10.1117/12.2243683; https://doi.org/10.1117/12.2243683

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