4 October 2016 The CD control improvement by using CDSEM 2D measurement of complex OPC patterns
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Abstract
As the process node becomes more advanced, the accuracy and precision in OPC pattern CD are required in mask manufacturing. CD SEM is an essential tool to confirm the mask quality such as CD control, CD uniformity and CD mean to target (MTT). Unfortunately, in some cases of arbitrary enclosed patterns or aggressive OPC patterns, for instance, line with tiny jogs and curvilinear SRAF, CD variation depending on region of interest (ROI) is a very serious problem in mask CD control, even it decreases the wafer yield. For overcoming this situation, the 2-dimensional (2D) method by Holon is adopted. In this paper, we summarize the comparisons of error budget between conventional (1D) and 2D data using CD SEM and the CD performance between mask and wafer by complex OPC patterns including ILT features.
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William Chou, William Chou, Jeffrey Cheng, Jeffrey Cheng, Adder Lee, Adder Lee, James Cheng, James Cheng, Alex CP Tzeng, Alex CP Tzeng, Colbert Lu, Colbert Lu, Ray Yang, Ray Yang, Hong Jen Lee, Hong Jen Lee, Hideaki Bandoh, Hideaki Bandoh, Izumi Santo, Izumi Santo, Hao Zhang, Hao Zhang, Chien Kang Chen, Chien Kang Chen, } "The CD control improvement by using CDSEM 2D measurement of complex OPC patterns", Proc. SPIE 9985, Photomask Technology 2016, 99851M (4 October 2016); doi: 10.1117/12.2241326; https://doi.org/10.1117/12.2241326
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