5 October 2016 EBL2: high power EUV exposure facility
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Abstract
TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis facility. The system can accept a range of sample sizes, including standard EUV reticles with or without pellicles. In the beam line, EUV masks and other samples can be exposed to EUV radiation in a controlled environment that is representative of actual operating conditions. This contribution will describe the design of the EUV beam line.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edwin te Sligte, Edwin te Sligte, Norbert Koster, Norbert Koster, Freek Molkenboer, Freek Molkenboer, Peter van der Walle, Peter van der Walle, Pim Muilwijk, Pim Muilwijk, Wouter Mulckhuyse, Wouter Mulckhuyse, Bastiaan Oostdijck, Bastiaan Oostdijck, Christiaan Hollemans, Christiaan Hollemans, Björn Nijland, Björn Nijland, Peter Kerkhof, Peter Kerkhof, Michel van Putten, Michel van Putten, André Hoogstrate, André Hoogstrate, Alex Deutz, Alex Deutz, } "EBL2: high power EUV exposure facility", Proc. SPIE 9985, Photomask Technology 2016, 998520 (5 October 2016); doi: 10.1117/12.2240921; https://doi.org/10.1117/12.2240921
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