5 October 2016 Wafer hot spot identification through advanced photomask characterization techniques
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As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer’s process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer’s needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.
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Yohan Choi, Yohan Choi, Michael Green, Michael Green, Jeff McMurran, Jeff McMurran, Young Ham, Young Ham, Howard Lin, Howard Lin, Andy Lan, Andy Lan, Richer Yang, Richer Yang, Mike Lung, Mike Lung, } "Wafer hot spot identification through advanced photomask characterization techniques", Proc. SPIE 9985, Photomask Technology 2016, 998521 (5 October 2016); doi: 10.1117/12.2248678; https://doi.org/10.1117/12.2248678

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