5 October 2016 High-performance fabrication process for 2xnm hole-NIL template production
Author Affiliations +
Abstract
UV nano imprint lithography (UV-NIL) has high-throughput and cost-effective for complex nano-scale patterns and is considered as a candidate for next generation lithography tool. In addition, NIL is the unmagnified lithography and contact transfer technique using template. Therefore, the lithography performance depends greatly on the quality of the template pattern. According to ITRS 2013, the minimum half pitch size of Line and Space (LS) pattern will reach 1x nm level within next five years. On the other hand, in hole pattern, half pith of 2x nm level will be required in five years. Pattern shrink rate of hole pattern size is slower than LS pattern, but shot counts increase explosively compared to LS pattern due to its data volume. Therefore, high throughput and high resolution EB lithography process is required. In previous study, we reported the result of hole patterning on master template which has high resolution resist material and etching process. This study indicated the potential for fabricating 2xnm hole master template [1]. After above study, we aim at fabricating the good quality of 2xnm master template which is assured about defect, CD uniformity(CDU), and Image placement(IP). To product high quality master template, we develop not only high resolution patterning process but also high accuracy quality assurance technology. We report the development progress about hole master template production.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keisuke Yagawa, Keisuke Yagawa, Machiko Suenaga, Machiko Suenaga, Takeharu Motokawa, Takeharu Motokawa, Mana Tanabe, Mana Tanabe, Akihiko Ando, Akihiko Ando, Eiji Yamanaka, Eiji Yamanaka, Keiko Morishita, Keiko Morishita, Shingo Kanamitsu, Shingo Kanamitsu, Masato Saito, Masato Saito, Masamitsu Itoh, Masamitsu Itoh, } "High-performance fabrication process for 2xnm hole-NIL template production", Proc. SPIE 9985, Photomask Technology 2016, 99852E (5 October 2016); doi: 10.1117/12.2243575; https://doi.org/10.1117/12.2243575
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Anti-spacer double patterning
Proceedings of SPIE (March 26 2014)
Practical 0.35-um i-line lithography
Proceedings of SPIE (May 16 1994)
Post-developed defect in word-line SADP process
Proceedings of SPIE (March 19 2012)

Back to Top