25 October 2016 Advances in AlGaInN laser diode technology for defence, security and sensing applications
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Abstract
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.
Conference Presentation
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S. P. Najda, S. P. Najda, P. Perlin, P. Perlin, T. Suski, T. Suski, L. Marona, L. Marona, M. Boćkowski, M. Boćkowski, M. Leszczyński, M. Leszczyński, P. Wisnieski, P. Wisnieski, R. Czernecki, R. Czernecki, G. Targowski, G. Targowski, } "Advances in AlGaInN laser diode technology for defence, security and sensing applications", Proc. SPIE 9992, Emerging Imaging and Sensing Technologies, 99920C (25 October 2016); doi: 10.1117/12.2240555; https://doi.org/10.1117/12.2240555
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