21 October 2016 Plasma shock waves excited by THz radiation
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The shock plasma waves in Si MOS, InGaAs and GaN HEMTs are launched at a relatively small THz power that is nearly independent of the THz input frequency for short channel (22 nm) devices and increases with frequency for longer (100 nm to 1 mm devices). Increasing the gate-to-channel separation leads to a gradual transition of the nonlinear waves from the shock waves to solitons. The mathematics of this transition is described by the Korteweg-de Vries equation that has the single propagating soliton solution.
Conference Presentation
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S. Rudin, G. Rupper, M. Shur, "Plasma shock waves excited by THz radiation", Proc. SPIE 9993, Millimetre Wave and Terahertz Sensors and Technology IX, 99930D (21 October 2016); doi: 10.1117/12.2241984; https://doi.org/10.1117/12.2241984

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