Nitrogen vacancies in the GaN/AlN heterointerface

Yahor V. Lebiadok; Tatyana V. Bezyazychnaya; Konstantin S. Zhuravlev

doi:10.1117/12.2241944

24 October 2016 Nitrogen vacancies in the GaN/AlN heterointerface

Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, Konstantin S. Zhuravlev

Proceedings Volume 9994, Optical Materials and Biomaterials in Security and Defence Systems Technology XIII; 99940I (2016) https://doi.org/10.1117/12.2241944
Event: SPIE Security + Defence, 2016, Edinburgh, United Kingdom

Abstract

The results of calculation of nitrogen vacancy geometry in GaN/AlN heterointerface and its comparison with experimental data are discussed in the paper. The methods of calculation of point defects geometry in the GaN/AlN interface within the frameworks of self-consistent field and density functional theory are compared.

Conference Presentation

Citation Download Citation

Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, and Konstantin S. Zhuravlev "Nitrogen vacancies in the GaN/AlN heterointerface", Proc. SPIE 9994, Optical Materials and Biomaterials in Security and Defence Systems Technology XIII, 99940I (24 October 2016); https://doi.org/10.1117/12.2241944

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