24 October 2016 Nitrogen vacancies in the GaN/AlN heterointerface
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Abstract
The results of calculation of nitrogen vacancy geometry in GaN/AlN heterointerface and its comparison with experimental data are discussed in the paper. The methods of calculation of point defects geometry in the GaN/AlN interface within the frameworks of self-consistent field and density functional theory are compared.
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Yahor V. Lebiadok, Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, Tatyana V. Bezyazychnaya, Konstantin S. Zhuravlev, Konstantin S. Zhuravlev, } "Nitrogen vacancies in the GaN/AlN heterointerface", Proc. SPIE 9994, Optical Materials and Biomaterials in Security and Defence Systems Technology XIII, 99940I (24 October 2016); doi: 10.1117/12.2241944; https://doi.org/10.1117/12.2241944
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