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5 March 2022 Polarization doping in blue-violet nitride emitters
Muhammed Aktas, Dario Schiavon, Anna Kafar, Szymon Stanczyk, Krzysztof Gibasiewicz, Szymon Grzanka, Piotr Perlin
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010A (2022) https://doi.org/10.1117/12.2607627
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this work, we study the optoelectrical properties of nitride LED structures employing polarization doping for the p-type layers. We compare standard Mg-doped, partially doped, and undoped AlGaN p-type layers. The electrical properties of these samples are similar, proving the successful use of polarization doping. The optical measurements suggest that doping of the electron blocking layer is required for preserving good light emission efficiency. We also studied our samples at lowered temperatures and observed no freeze-out region down to 77K. For top metal contact, sub contact doping is indispensable because the intrinsic top layer causes the Schottky barrier.
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Muhammed Aktas, Dario Schiavon, Anna Kafar, Szymon Stanczyk, Krzysztof Gibasiewicz, Szymon Grzanka, and Piotr Perlin "Polarization doping in blue-violet nitride emitters", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010A (5 March 2022); https://doi.org/10.1117/12.2607627
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KEYWORDS
Polarization
Doping
Magnesium
Ionization
Light emitting diodes
Metalorganic chemical vapor deposition
Metals
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