CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12001 > Article
Presentation
5 March 2022 InGaN blue light-emitting micro-diodes with current path defined by tunnel junction
Krzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muziol, Czeslaw Skierbiszewski, Szymon Grzanka, Anna Kafar, Piotr Perlin, Stephen Najda, Tadeusz Suski, Lucja Marona
Author Affiliations +
Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010Z (2022) https://doi.org/10.1117/12.2609763
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this paper, we try to resolve problems related to decreasing the size of an LED, and find a solution that would let us preserve optoelectronics parameters. The main idea is to use tunnel junctions to define the current path and, therefore, define the size of µLED. This way, during fabrication, there is no need to etch the active region. That way, it does not introduce any degradation nor problems related to surface states or differences in electrical fields inside the device. We have fabricated such devices with sizes ranging from 100 µm-5 µm. In the characterization of these devices, it became apparent that, both electrical and optical parameters, are fully scalable with size. Most importantly, we do not observe an increase in the non-radiative recombination coefficient even for the smallest device. In addition, we observe excellent thermal stability of their light emission characteristics.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Krzysztof Gibasiewicz, Agata Bojarska-Cieślińska, Grzegorz Muziol, Czeslaw Skierbiszewski, Szymon Grzanka, Anna Kafar, Piotr Perlin, Stephen Najda, Tadeusz Suski, and Lucja Marona "InGaN blue light-emitting micro-diodes with current path defined by tunnel junction", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010Z (5 March 2022); https://doi.org/10.1117/12.2609763
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Indium gallium nitride
Light emitting diodes
Display technology
Optoelectronics
Etching
LCDs
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top