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5 March 2022 THz electroluminescence from n-type Ge/SiGe quantum cascade structures
Giacomo Scalari, David Stark, Muhammad Mirza, Luca Persichetti, Michele Montanari, Thomas Grange, Stefan Birner, Michele Virgilio, Chiara Ciano, Michele Ortolani, Cedric Corley, Giovanni Capellini, Luciana Di Gaspare, Monica De Seta, Douglas J. Paul, Jerome Faist
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Proceedings Volume PC12006, Silicon Photonics XVII; PC1200609 (2022) https://doi.org/10.1117/12.2606541
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We report electroluminescence originating from L-valley transitions in n-type Ge/Si0.15Ge0.85 quantum cascade structures centred at 3.4 and 4.9 THz. . Different strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design employs a vertical optical transition and the observed spectral features are well described by non-equilibrium Green’s function calculations. We observe two emission peaks that are due to a non-selective injection in the upper state of the radiative transition. Comparison with similar III-V emitters is used to deduce radiative efficiencies. We will present new results from 4 quantum well Ge/SiGe emitters based on diagonal transitions in real space.
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Giacomo Scalari, David Stark, Muhammad Mirza, Luca Persichetti, Michele Montanari, Thomas Grange, Stefan Birner, Michele Virgilio, Chiara Ciano, Michele Ortolani, Cedric Corley, Giovanni Capellini, Luciana Di Gaspare, Monica De Seta, Douglas J. Paul, and Jerome Faist "THz electroluminescence from n-type Ge/SiGe quantum cascade structures", Proc. SPIE PC12006, Silicon Photonics XVII, PC1200609 (5 March 2022); https://doi.org/10.1117/12.2606541
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KEYWORDS
Electroluminescence
Terahertz radiation
Semiconductor lasers
Laser applications
Heterojunctions
Silicon
Semiconductors
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