Presentation
5 March 2022 THz silicon photonics: an intersubband emitter
Author Affiliations +
Abstract
A terahertz intersubband emitter based on silicon is presented. The emission originates from n-type Ge/SiGe quantum cascade structures. We designed a strain-compensated single quantum active region based on a vertical optical transition and tensile-strained Si0.15Ge0.85 barriers. The 51 quantum cascade periods (corresponding to 4.2 μm) were grown on a Si1-xGex reverse graded virtual substrate on Ge/Si(001) substrates. Deeply etched diffraction gratings were processed and the surface emitting devices were characterized at 5 K with a Fourier transform infrared spectrometer. We observed two distinct peaks at 3.4 and 4.9 THz with a line broadening of 20%. This is an important step towards the realization of an Ge/SiGe THz quantum cascade laser.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Stark, Muhammad Mirza, Luca Persichetti, Michele Montanari, Sergej Markmann, Mattias Beck, Thomas Grange, Stefan Birner, Michele Virgilio, Chiara Ciano, Michele Ortolani, Cedric Corley-Wiciak, Giovanni Capellini, Luciana Di Gaspare, Monica De Seta, Douglas J. Paul, Jérôme Faist, and Giacomo Scalari "THz silicon photonics: an intersubband emitter", Proc. SPIE PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII, PC120090D (5 March 2022); https://doi.org/10.1117/12.2609437
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KEYWORDS
Terahertz radiation

Quantum cascade lasers

Silicon photonics

Electroluminescence

FT-IR spectroscopy

Quantum wells

Laser applications

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